During on-wafer electroluminescence measurements, the UVA LED with an active region grown with precursor modulation produced ...

A statement issued by Belgium’s Federal Prosecutor’s Office, has revealed that a 52-year-old man born in Beijing, and holding ...

This 2DEG forms the operating basis of GaN HEMTs. Across the broader family of wurtzite nitrides, polarisation underpins ...

IQE says it remains confident in achieving its FY 2026 guidance of revenue growth in excess of 30 percent year-on-year, ...

Although the technology remains at the research stage and is still a long way from matching the efficiency of commercial LEDs ...

The work, published in Nature Nanotechnology, combines layered compound semiconductor materials with nanostructured ...

Sivers Semiconductors has announced its interim report for the second quarter of 2026, with progress in its transition from ...

Swedish company Sivers Semiconductors has announced a $30m investment to significantly expand its InP manufacturing facility ...

Vexlum, the Finland-based developer of Vertical-External-Cavity Surface-Emitting Laser (VECSEL) technology, has appointed ...

Following an initial announcement and purchase order in January 2025, the extension of the companies’ long termr elationship ...

RF GaN technology is entering a new phase of growth and strategic competition, according to KnowMade in its latest report, ...

In November 2025, Navitas and GF announced a long-term strategic partnership to accelerate US GaN innovation and domestic ...