A study revealed that a simple thermal reaction of gallium nitride with metallic magnesium results in the formation of a distinctive superlattice structure. This represents the first time researchers ...
ERFURT, Germany & GRENOBLE, France--(BUSINESS WIRE)--X-FAB Silicon Foundries and Exagan, a start-up innovator of Gallium Nitride (GaN) semiconductor technology that enables smaller and more efficient ...
Gallium nitride (GaN) is quickly becoming the semiconductor material of choice for both RF/microwave and higher-wavelength devices. It has long been a semiconductor foundation for light-emitting ...
In Gallium Nitride (GaN) implanted with a small amount of magnesium (Mg), NIMS succeeded for the first time in visualizing the distribution and optical behavior of the implanted Mg at the nanoscale ...
TORRANCE, Calif. and HYDERABAD, India, Dec. 08, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NVTS) Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) ...
DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, ...
The US, China and Japan are working on research and development in gallium oxide crystal growth and productionizing gallium oxide chips. The Gallium oxide chips can have a voltage resistance value 3 ...
Gallium nitride (GaN) and its wide bandgap cousin silicon carbide (SiC) have started to disrupt power electronics. Ironically, just a few years ago, GaN was considered useless as a semiconductor, ...
In Gallium Nitride (GaN) implanted with a small amount of magnesium (Mg), scientists succeeded for the first time in visualizing the distribution and optical behavior of the implanted Mg at the ...
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