This technical article gives you information on the advantages of Silicon Carbide Schottky Diodes over Silicon Rectifiers and how Silicon Rectifiers can compete with SiC Diodes. It also explains why ...
Ahead of the upcoming APEC Conference, Global Power Device, Inc. (GPD) announced a new line of Silicon Carbide (SiC) diodes that delivers ultra-high performance at prices that are competitive with ...
Solar microinverters require high performance diodes to maximize the energy harvested from solar panels while reducing the cost per watt. Silicon Carbide Schottky diodes could provide the needed ...
A group at the University of Montpellier's Institute of Electronics and Systems (IES) has demonstrated mid-IR semiconductor lasers grown expitaxially on an on-axis silicon substrate, said to be the ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced its 600 V 12 A Qspeed diode, ...
A special type of diode made from a crystalline material whose layers are just three atoms thick has been successfully realized for the first time. The superior properties of such ultra-thin crystals ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
HOUSTON – (July 9, 2013) – A Rice University laboratory pioneering memory devices that use cheap, plentiful silicon oxide to store data has pushed them a step further with chips that show the ...
The H Series has a 600 Voltage and the lowest switching cost and highest efficiency. Qspeed™ diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce ...
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