Based on high-frequency high-voltage vertical field-effect transistors (HVVFETs), the HVV1011-300, HVV1214-025, and HVV1214-100 power transistors deliver frequency bandwidth, voltage level, and power ...
Challenges like higher selectivity and precise etching are critical for angstrom-scale IC production. Advanced RF pulsing and plasma control enhance precision in sub-nanometer processes. New impedance ...
DENVER--(BUSINESS WIRE)--Advanced Energy Industries, Inc. (Nasdaq: AEIS) – a global leader in highly engineered, precision power conversion, measurement and control solutions – has unveiled the NavX™ ...
A research team led by Dr. Jang Sung-roc at the Electrophysics Research Center of the Korea Electrotechnology Research Institute (KERI) has developed a ‘tailored pulsed power modulator for bias’, ...
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